Critically coupled surface phonon-polariton excitation in silicon carbide.
نویسندگان
چکیده
We observe critical coupling to surface phonon-polaritons in silicon carbide by attenuated total reflection of mid-IR radiation. Reflectance measurements demonstrate critical coupling by a double scan of wavelength and incidence angle. Critical coupling occurs when prism coupling loss is equal to losses in silicon carbide and the substrate, resulting in maximal electric field enhancement.
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ورودعنوان ژورنال:
- Optics letters
دوره 34 17 شماره
صفحات -
تاریخ انتشار 2009